Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM With 10-ns Low Power Write Operation, 10 Years Retention and Endurance > 10ยนยน
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DOI: 10.1109/ted.2020.3025749
Abstract: We fabricated a quadruple-interface perpendicular magnetic tunnel junction (MTJ) (Quad-MTJ) down to 33 nm using physical vapor-deposition, reactive ion etching, and damage-control integration process technologies that we developed under a 300-mm process. We demonstrated the… read more here.
Keywords: quad mtj; years retention; mtj; scalability ... See more keywords