High-crystalline-quality AlN grown on SiC substrates by controlling growth mode
Sign Up to like & getrecommendations! Published in 2020 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2020.125605
Abstract: Abstract We investigate the relation between growth mode and crystalline quality of AlN directly grown on an on-axis 6H-SiC(0001) substrate under various supersaturation conditions by metal-organic chemical vapor deposition. Although 500-nm-thick AlN fabricated by a… read more here.
Keywords: growth mode; crystalline quality; quality aln; tdd ... See more keywords
High-quality AlN grown with a single substrate temperature below 1200 °C
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-07616-8
Abstract: Abstract1.5-μm AlN grown by metal-organic chemical vapor deposition (MOCVD), with a single substrate temperature of 1180 °C, exhibits atomically flat surface and the XRD (102) peak width of 427 arcsec. The results are achieved with a pulsed… read more here.
Keywords: temperature; aln grown; substrate temperature; single substrate ... See more keywords
High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/srep42747
Abstract: Influence of sapphire pretreatment conditions on crystalline quality of AlN epilayers has been investigated by metal organic chemical vapor deposition (MOCVD). Compared to alumination treatment, it is found that appropriate sapphire nitridation significantly straightens the… read more here.
Keywords: aln epilayers; quality aln; metal organic; sapphire ... See more keywords
Ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE): a new approach to high quality AlN growth
Sign Up to like & getrecommendations! Published in 2018 at "CrystEngComm"
DOI: 10.1039/c8ce01473f
Abstract: We propose a new growth technique, ammonia-free high temperature metalorganic vapor phase epitaxy (AFHT-MOVPE), for high quality AlN growth. Nitrogen (N2) gas, instead of ammonia (NH3) gas in the conventional MOVPE growth technique, is used… read more here.
Keywords: technique; high quality; quality aln; aln growth ... See more keywords
High-quality AlN film grown on a nanosized concave–convex surface sapphire substrate by metalorganic vapor phase epitaxy
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.5008258
Abstract: We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo–convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick… read more here.
Keywords: quality; sapphire substrate; surface; quality aln ... See more keywords
Improvement of Crystal Quality of AlN Films with Different Polarities by Annealing at High Temperature
Sign Up to like & getrecommendations! Published in 2022 at "Micromachines"
DOI: 10.3390/mi13010129
Abstract: High-quality AlN film is a key factor affecting the performance of deep-ultraviolet optoelectronic devices. In this work, high-temperature annealing technology in a nitrogen atmosphere was used to improve the quality of AlN films with different… read more here.
Keywords: aln films; different polarities; crystal quality; quality ... See more keywords
Heteroepitaxy Growth and Characterization of High-Quality AlN Films for Far-Ultraviolet Photodetection
Sign Up to like & getrecommendations! Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12234169
Abstract: The ultra-wide bandgap (~6.2 eV), thermal stability and radiation tolerance of AlN make it an ideal choice for preparation of high-performance far-ultraviolet photodetectors (FUV PDs). However, the challenge of epitaxial crack-free AlN single-crystalline films (SCFs)… read more here.
Keywords: aln films; heteroepitaxy growth; quality aln; far ultraviolet ... See more keywords