Improved quality of In0.30Ga0.70As layers grown on GaAs substrates using undulating step-graded GaInP buffers
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DOI: 10.1016/j.jcrysgro.2018.05.014
Abstract: Abstract High quality In0.30Ga0.70As layers on GaAs substrates were obtained using compositional undulating step-graded Ga1-xInxP (x = 0.48–0.78) buffers grown by metal-organic chemical vapor deposition. The density of threading dislocation is about 4.0 × 106 cm−2 and the root-mean-square roughness… read more here.
Keywords: 30ga0 70as; quality in0; step; in0 30ga0 ... See more keywords