Understanding the electrostatics of top-electrode vertical quantized Si nanowire metal–insulator–semiconductor (MIS) structures for future nanoelectronic applications
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DOI: 10.1007/s10825-019-01321-7
Abstract: In this paper, a comprehensive analysis of the electrostatics of top-electrode vertically aligned quantized Si nanowire metal–insulator–semiconductor (MIS) structure is performed by formulating a self-consistent analytical model with simultaneous solution of Schrodinger and Poisson equations.… read more here.
Keywords: quantized nanowire; top electrode; insulator semiconductor; electrostatics ... See more keywords