Quantum Enhancement of a S/D Tunneling Model in a 2D MS-EMC Nanodevice Simulator: NEGF Comparison and Impact of Effective Mass Variation
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DOI: 10.3390/mi11020204
Abstract: As complementary metal-oxide-semiconductor (CMOS) transistors approach the nanometer scale, it has become mandatory to incorporate suitable quantum formalism into electron transport simulators. In this work, we present the quantum enhancement of a 2D Multi-Subband Ensemble… read more here.
Keywords: impact effective; simulator; enhancement tunneling; tunneling model ... See more keywords