Deep-level transient spectroscopy studies of electron and hole traps in n-type GaN homoepitaxial layers grown by quartz-free hydride-vapor-phase epitaxy
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DOI: 10.1063/1.5098965
Abstract: We studied deep levels in quartz-free hydride-vapor-phase epitaxy (QF-HVPE)-grown homoepitaxial n-type GaN layers within which three electron and eight hole traps were detected. The dominant electron and hole traps observed in the QF-HVPE-grown GaN layers… read more here.
Keywords: gan layers; hole traps; quartz free; spectroscopy ... See more keywords