A high performance trench gate tunneling field effect transistor based on quasi-broken gap energy band alignment heterojunction
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DOI: 10.1088/1361-6528/ac56b9
Abstract: In this letter, a tunneling field effect transistor based on quasi-broken gap energy band alignment (QB-TFET) is proposed and investigated by simulation method. To offering high on-state current, InGaAs/GaAsSb heterojunction with quasi-broken gap energy band… read more here.
Keywords: band; broken gap; energy band; quasi broken ... See more keywords