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   Articles with "quasi vertical" as a keyword



720 V quasi-vertical GaN-on-silicon p–n diodes with surge capability fabricated using selective area growth

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recommendations! Published in 2025 at "Journal of Applied Physics"

DOI: 10.1063/5.0299842

Abstract: This work demonstrates, for the first time, avalanche breakdown capability in quasi-vertical gallium nitride (GaN) on silicon (Si) substrates employing localized epitaxial growth. On industry-standard 200 mm wafers, we integrated an 8 μm thick GaN drift layer… read more here.

Keywords: capability; 720 quasi; gan silicon; quasi vertical ... See more keywords

Comparison of Proton Irradiation Effects on Electrical Properties of Quasi-Vertical and Lateral GaN Schottky Barrier Diodes

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recommendations! Published in 2025 at "IEEE Transactions on Nuclear Science"

DOI: 10.1109/tns.2024.3520476

Abstract: In this article, quasi-vertical and lateral gallium nitride (GaN) Schottky barrier diodes (SBDs) with similar electrical parameters are irradiated with 200-keV protons at different fluences. The radiation-induced defects induced by irradiation affect carrier concentration and… read more here.

Keywords: gan schottky; vertical lateral; schottky barrier; irradiation ... See more keywords

Demonstration of Integrated Quasi-Vertical DMOS Compatible with the Bipolar-CMOS-DMOS Process Achieving Ultralow RON,sp

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recommendations! Published in 2025 at "Nanomaterials"

DOI: 10.3390/nano15030172

Abstract: An integrated quasi-vertical double-diffused MOSFET (DMOS) with split-gate trench (SGT) structure (SGT-QVDMOS), whose specific ON-state resistance (RON,sp) breaks the traditional Si limit significantly, is proposed and fabricated. The measured data of the latest manufactured device… read more here.

Keywords: integrated quasi; ron; dmos; quasi vertical ... See more keywords

60Co gamma irradiation effects on GaN quasi-vertical Schottky barrier diodes with passivation layer and their post-irradiation annealing behavior

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recommendations! Published in 2023 at "Applied Physics Express"

DOI: 10.35848/1882-0786/accc0d

Abstract: In this work, the effect of gamma irradiation on the quasi-vertical GaN Schottky barrier diodes with a passivation layer was investigated for the first time. The forward I–V characteristic was improved and the reverse leakage… read more here.

Keywords: gamma irradiation; schottky barrier; barrier diodes; passivation ... See more keywords