We-Quatro: Radiation-Hardened SRAM Cell With Parametric Process Variation Tolerance
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DOI: 10.1109/tns.2017.2728180
Abstract: Under radiation environment, conventional SRAMs suffer from high soft-error rate. To address this challenge, several radiation-hardened static-random access-memory (SRAM) cells such as twelve-transistor (12T) Dice and ten-transistor (10T) Quatro have been developed. Quatro is more… read more here.
Keywords: radiation hardened; sram cell; cell; quatro ... See more keywords