GaN Transistors’ Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration
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DOI: 10.1109/access.2024.3357239
Abstract: Wide bandgap Gallium Nitride (GaN) technology promises to deliver the next generation of power transistors capable of high energy density and compact design integration however, without active monitoring high failing rates are recorded due to… read more here.
Keywords: integration; radiated switching; switching noise; hall sensor ... See more keywords