New interatomic potentials of W, Re and W-Re alloy for radiation defects
Sign Up to like & getrecommendations! Published in 2018 at "Journal of Nuclear Materials"
DOI: 10.1016/j.jnucmat.2018.01.059
Abstract: Abstract Tungsten (W) and W-based alloys have been considered as promising candidates for plasma-facing materials (PFMs) in future fusion reactors. The formation of rhenium (Re)-rich clusters and intermetallic phases due to high energy neutron irradiation… read more here.
Keywords: radiation defects; new interatomic; energy; potentials alloy ... See more keywords
Anneal induced transformations of defects in hadron irradiated Si wafers and Schottky diodes
Sign Up to like & getrecommendations! Published in 2018 at "Materials Science in Semiconductor Processing"
DOI: 10.1016/j.mssp.2017.11.035
Abstract: Abstract In this research, the anneal induced transformations of radiation defects have been studied in n-type and p-type CZ and FZ Si samples, irradiated with relativistic protons (24 GeV/c) and pions (300 MeV/c) using particle fluences up… read more here.
Keywords: radiation defects; induced transformations; schottky diodes; anneal induced ... See more keywords
Molecular dynamics simulation of the behavior of typical radiation defects under stress gradient field in tungsten
Sign Up to like & getrecommendations! Published in 2021 at "Journal of Applied Physics"
DOI: 10.1063/5.0059748
Abstract: In the fusion environment, a complex stress field is generated in materials, which affects the evolution of radiation defects. In this study, the behaviors of radiation-induced defects under the effect of stress gradient field in… read more here.
Keywords: radiation defects; field tungsten; stress gradient; gradient field ... See more keywords
Mechanisms of Electron Scattering in Uniaxially Deformed Silicon Single Crystals with Radiation Defects
Sign Up to like & getrecommendations! Published in 2019 at "Latvian Journal of Physics and Technical Sciences"
DOI: 10.2478/lpts-2019-0030
Abstract: Abstract Temperature dependencies for Hall mobility of electrons for the uniaxially deformed n-Si single crystals, irradiated by the flow of electrons Ω=1·1017 el./cm2 with the energy of 12 MeV, are obtained on the basis of… read more here.
Keywords: radiation defects; single crystals; electron scattering; silicon ... See more keywords