Sign Up to like & get
recommendations!
0
Published in 2017 at "Semiconductors"
DOI: 10.1134/s1063782617120065
Abstract: The problem of radiation-produced defects in n-Ge before and after n → p conversion is discussed in the light of electrical data obtained by means of Hall effect measurements as well as Deep Level Transient…
read more here.
Keywords:
produced defects;
defects germanium;
experimental data;
radiation produced ... See more keywords