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Published in 2022 at "Materials"
DOI: 10.3390/ma15124052
Abstract: The effect of a weak magnetic field (B = 0.17 T) and X-irradiation (D < 520 Gy) on the rearrangement of the defective structure of near-surface p-type silicon layers was studied. It was established that…
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Keywords:
near surface;
silicon surface;
surface layers;
charge ... See more keywords