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Published in 2017 at "Advanced Functional Materials"
DOI: 10.1002/adfm.201700384
Abstract: In order to fulfill the information storage needs of modern societies, the performance of electronic nonvolatile memories (NVMs) should be continuously improved. In the past few years, resistive random access memories (RRAM) have raised as…
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Keywords:
resistive random;
resistive switching;
random access;
filamentary distributed ... See more keywords
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Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100142
Abstract: Artificial synapses based on electrochemical random‐access memory (ECRAM) have emerged as an important component for neuromorphic chips because they are capable to execute simultaneous signal transmission and memory operations. However, existing ECRAM synapse surfers with…
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Keywords:
random access;
oxygen ion;
oxygen;
memory ... See more keywords
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Published in 2021 at "Advanced Electronic Materials"
DOI: 10.1002/aelm.202100297
Abstract: This work explores the innovative concept of a hybrid dual‐behavior device, based on emerging nonvolatile memory technology, for both data retention and energy storage. RRAM (resistive random access memory) is considered a major candidate as…
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Keywords:
energy;
access memory;
random access;
memory ... See more keywords
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Published in 2022 at "Quantum Information Processing"
DOI: 10.1007/s11128-022-03470-4
Abstract: We study the communication protocol known as a Quantum Random Access Code (QRAC) which encodes n classical bits into m qubits (m < n) with a probability of recovering any of the initial n bits…
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Keywords:
random access;
geometry;
geometry bloch;
quantum ... See more keywords
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Published in 2019 at "Wireless Personal Communications"
DOI: 10.1007/s11277-019-06212-5
Abstract: Internet of Things is gaining ground in the next generation of Internet. Random access protocols such as ALOHA and its variants play an important role for the successful implementation of 5G. The framed ALOHA is…
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Keywords:
time;
random access;
framed aloha;
fram ... See more keywords
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Published in 2020 at "Wireless Personal Communications"
DOI: 10.1007/s11277-019-07006-5
Abstract: Narrowband Internet of Things (NB-IoT) is a Quasi-5G technology that will provide coverage for massive number of low-power consumption applications. Hence, the potential massive random access (RA) users call for a new RA scheme. In…
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Keywords:
random access;
scheme;
non orthogonal;
access ... See more keywords
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Published in 2020 at "Journal of Electronic Materials"
DOI: 10.1007/s11664-020-08177-9
Abstract: The effect of annealing on the performance of conductive-bridging random-access memory (CBRAM) with an amorphous gallium oxide (a-Ga2O3) switching layer has been studied. After annealing at 200°C in N2, a significant improvement of the bipolar…
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Keywords:
conductive bridging;
random access;
bridging random;
performance ... See more keywords
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Published in 2019 at "Ceramics International"
DOI: 10.1016/j.ceramint.2019.05.157
Abstract: Abstract Resistive random access memory (RRAM) has been developed as a next-generation nonvolatile memory because of its fast operation speed, low power consumption, high density, and simple structure. Non-oxide materials such as AlN-based RRAM also…
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Keywords:
access memory;
random access;
aln based;
memory ... See more keywords
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Published in 2020 at "Ceramics International"
DOI: 10.1016/j.ceramint.2020.05.191
Abstract: Abstract The resistive switching (RS) behavior of a gallium oxide (Ga2O3) thin film for use in resistive random access memory (RRAM) was investigated. Ta/Ga2O3/Pt memory devices exhibited favorable RS behavior, such as a small distribution…
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Keywords:
resistive random;
random access;
access memory;
gallium oxide ... See more keywords
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Published in 2017 at "Journal of Alloys and Compounds"
DOI: 10.1016/j.jallcom.2017.06.178
Abstract: Abstract Bilayer of NiO x /TiO 2 thin film spin-coated and sputtering-deposited on the fluorine doped tin oxide (FTO) substrate is employed to develop a resistive random access memory device. An enhanced resistive switching (RS)…
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Keywords:
resistive random;
resistive switching;
random access;
enhanced resistive ... See more keywords
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Published in 2019 at "Vacuum"
DOI: 10.1016/j.vacuum.2018.12.020
Abstract: Abstract In this study, a fully Si-compatible resistive-switching random-access memory (ReRAM) employing GeOx as the switching layer is fabricated, analyzed, and characterized. I–V curves and endurance characteristics have been obtained from the measurement of fabricated…
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Keywords:
random access;
access memory;
switching random;
resistive switching ... See more keywords