Generation of dislocation clusters at triple junctions of random angle grain boundaries during cast growth of silicon ingots
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DOI: 10.35848/1882-0786/abbb1c
Abstract: Three-dimensional distribution of grain boundaries (GBs) and generation sources of dislocation clusters is examined in a cast-grown high-performance multicrystalline silicon ingot for commercial solar cells. A significant number of dislocations are generated nearby some triple… read more here.
Keywords: random angle; generation; dislocation clusters; grain boundaries ... See more keywords