Role of quantum capacitance on the random dopant fluctuation induced threshold voltage variability in junctionless InGaAs FinFETs
Sign Up to like & getrecommendations! Published in 2020 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2020.107862
Abstract: Abstract This paper reports an investigation of the effects of varying different device parameters on the random-dopant-fluctuation (RDF) induced threshold voltage variability (σVT) in junctionless (JL) InGaAs FinFETs. Such investigation is made by means of… read more here.
Keywords: induced threshold; ingaas finfets; threshold voltage; dopant fluctuation ... See more keywords
Undoped and Doped Junctionless FETs: Source/Drain Contacts and Immunity to Random Dopant Fluctuation
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DOI: 10.1109/led.2017.2690993
Abstract: By using numerical simulations, we demonstrate that a proper source/drain contacting strategy not only boosts the on-currents, but also eliminates random dopant fluctuation (RDF) of a junctionless FET (JLFET). Two contacting strategies for JLFETs with… read more here.
Keywords: tex math; source drain; random dopant; inline formula ... See more keywords
Variability Effects in Nanowire and Macaroni MOSFETs—Part I: Random Dopant Fluctuations
Sign Up to like & getrecommendations! Published in 2020 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2020.2971219
Abstract: In this article and the related Part II, we investigate variability effects on the threshold voltage of nanowire and Macaroni MOSFETs, focusing on random dopant fluctuations (RDFs) and random telegraph noise, to assess their dependences… read more here.
Keywords: nanowire macaroni; part; dopant fluctuations; random dopant ... See more keywords