Quantum correlations and decoherence dynamics for a qutrit–qutrit system under random telegraph noise
Sign Up to like & getrecommendations! Published in 2017 at "Quantum Information Processing"
DOI: 10.1007/s11128-017-1645-4
Abstract: We analyze the effect of a classical random telegraph noise on the dynamics of quantum correlations and decoherence between two non-interacting spin-qutrit particles, initially entangled, and coupled either to independent sources or to a common… read more here.
Keywords: random telegraph; correlations decoherence; quantum correlations; telegraph noise ... See more keywords
Systematic method for electrical characterization of random telegraph noise in MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.031
Abstract: Abstract This work introduces a new protocol which aims to facilitate massive on-wafer characterization of Random Telegraph Noise (RTN) in MOS transistors. The methodology combines the noise spectral density scanning by gate bias assisted with… read more here.
Keywords: random telegraph; telegraph noise; electrical characterization; characterization random ... See more keywords
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-06467-7
Abstract: In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k… read more here.
Keywords: random telegraph; two metastable; telegraph noise; metastable states ... See more keywords
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0147587
Abstract: Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect… read more here.
Keywords: random telegraph; noise nanometer; noise; scale cmos ... See more keywords
Random telegraph noise on the threshold voltage of multi-level flash memory*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/1/018502
Abstract: We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation () and the distribution due to RTN increase with… read more here.
Keywords: voltage; random telegraph; threshold voltage; flash memory ... See more keywords
Long-time protection of thermal correlations in a hybrid-spin system under random telegraph noise.
Sign Up to like & getrecommendations! Published in 2022 at "Physical review. E"
DOI: 10.1103/physreve.106.034122
Abstract: The engineering features of transmitting mediums and their impact on different characteristics of a quantum system play a significant role in the efficient performance of nonlocal protocols. For this purpose, the dynamics of open quantum… read more here.
Keywords: random telegraph; system; quantum; fisher information ... See more keywords
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3065869
Abstract: The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes… read more here.
Keywords: random telegraph; accuracy; telegraph noise; distribution ... See more keywords
Experimental Characterization of the Random Telegraph Noise Signature in MOSFETs Under the Influence of Magnetic Fields
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2835142
Abstract: Random telegraph noise has been experimentally characterized in two sets of nMOSFET devices under the influence of perpendicular magnetic fields at room temperature. The experimental measurements were performed following a systematic trapping phenomena characterization protocol.… read more here.
Keywords: telegraph noise; random telegraph; magnetic fields;
Random Telegraph Noise Read Instability Characteristics in a Megabit RRAM Array
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2866588
Abstract: Random telegraph noise (RTN) read instability of high-resistance state (HRS) in hafnium–based resistive random access memory (RRAM) is investigated using megabit array statistical analytics. It is found that the RTN read current fluctuation decreases along… read more here.
Keywords: telegraph noise; random telegraph; array; read instability ... See more keywords
A Sub-Threshold Noise Transient Simulator Based on Integrated Random Telegraph and Thermal Noise Modeling
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems"
DOI: 10.1109/tcad.2017.2717705
Abstract: Near-threshold and sub-threshold voltage designs have been identified as possible solutions to overcome the limitations introduced by energy consumption in modern very large scale integration circuits. However, as we approach sub-10 nm transistor technology, aggressive… read more here.
Keywords: sub threshold; random telegraph; thermal noise; time ... See more keywords
Random Telegraph Noise in Analog CMOS Circuits
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2023.3261564
Abstract: Flicker noise, or 1/f noise, is known to increase as devices scale down. However, as the scaling of MOS transistors advances, the effect of individual oxide defects, which originates flicker noise, becomes apparent through distinguishable… read more here.
Keywords: random telegraph; noise; analog; flicker noise ... See more keywords