Quantum Speed Limits in Qubit Dynamics Driven by Bistable Random Telegraph Noise: From Markovian to Non-Markovian Regimes
Sign Up to like & getrecommendations! Published in 2025 at "International Journal of Theoretical Physics"
DOI: 10.1007/s10773-025-06192-2
Abstract: The quantum speed-limit (QSL) time of a single superconducting qubit subject to pure dephasing by bistable random telegraph noise (RTN) is examined. Non-Markovianity is quantified using a coherence-based measure, and the unified QSL time for… read more here.
Keywords: markovian non; bistable random; non markovian; quantum speed ... See more keywords
Quantum correlations and decoherence dynamics for a qutrit–qutrit system under random telegraph noise
Sign Up to like & getrecommendations! Published in 2017 at "Quantum Information Processing"
DOI: 10.1007/s11128-017-1645-4
Abstract: We analyze the effect of a classical random telegraph noise on the dynamics of quantum correlations and decoherence between two non-interacting spin-qutrit particles, initially entangled, and coupled either to independent sources or to a common… read more here.
Keywords: random telegraph; correlations decoherence; quantum correlations; telegraph noise ... See more keywords
Systematic method for electrical characterization of random telegraph noise in MOSFETs
Sign Up to like & getrecommendations! Published in 2017 at "Solid-state Electronics"
DOI: 10.1016/j.sse.2016.10.031
Abstract: Abstract This work introduces a new protocol which aims to facilitate massive on-wafer characterization of Random Telegraph Noise (RTN) in MOS transistors. The methodology combines the noise spectral density scanning by gate bias assisted with… read more here.
Keywords: random telegraph; telegraph noise; electrical characterization; characterization random ... See more keywords
Characterizing Defects Inside Hexagonal Boron Nitride Using Random Telegraph Signals in van der Waals 2D Transistors
Sign Up to like & getrecommendations! Published in 2024 at "ACS Nano"
DOI: 10.1021/acsnano.4c06929
Abstract: Single-crystal hexagonal boron nitride (hBN) is used extensively in many two-dimensional electronic and quantum devices, where defects significantly impact performance. Therefore, characterizing and engineering hBN defects are crucial for advancing these technologies. Here, we examine… read more here.
Keywords: spectroscopy; boron nitride; hbn; random telegraph ... See more keywords
Anomalous random telegraph noise in nanoscale transistors as direct evidence of two metastable states of oxide traps
Sign Up to like & getrecommendations! Published in 2017 at "Scientific Reports"
DOI: 10.1038/s41598-017-06467-7
Abstract: In this paper, a new pattern of anomalous random telegraph noise (RTN), named “reversal RTN” (rRTN) induced by single oxide trap, is observed in the drain current of nanoscale metal-oxide-semiconductor field-effect transistors (MOSFETs) with high-k… read more here.
Keywords: random telegraph; two metastable; telegraph noise; metastable states ... See more keywords
Random telegraph noise in nanometer-scale CMOS transistors exposed to ionizing radiation
Sign Up to like & getrecommendations! Published in 2023 at "Applied Physics Letters"
DOI: 10.1063/5.0147587
Abstract: Nanometer-scale transistors often exhibit random telegraph noise (RTN) with high device-to-device variability. Recent experiments up to Grad total ionizing dose (TID) demonstrate stable RTN in planar bulk-Si metal-oxide-semiconductor (MOS) transistors and in Si fin field-effect… read more here.
Keywords: random telegraph; noise nanometer; noise; scale cmos ... See more keywords
Origin of random telegraph noise in silicon-based devices: Insights from first-principles study
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Applied Physics"
DOI: 10.1063/5.0279092
Abstract: The microscopic origin of random telegraph noise (RTN) in semiconductor devices remains a subject of debate. Previous studies proposed several hypotheses involving phosphorus–vacancy center and oxygen–vacancy centers, while recent experimental evidence indicates that it may… read more here.
Keywords: random telegraph; first principles; telegraph noise; origin random ... See more keywords
Random telegraph noise on the threshold voltage of multi-level flash memory*
Sign Up to like & getrecommendations! Published in 2017 at "Chinese Physics B"
DOI: 10.1088/1674-1056/26/1/018502
Abstract: We investigate the impact of random telegraph noise (RTN) on the threshold voltage of multi-level NOR flash memory. It is found that the threshold voltage variation () and the distribution due to RTN increase with… read more here.
Keywords: voltage; random telegraph; threshold voltage; flash memory ... See more keywords
Quantum dephasing dynamics in the presence of asymmetric random telegraph noise
Sign Up to like & getrecommendations! Published in 2025 at "Chinese Physics B"
DOI: 10.1088/1674-1056/ae0398
Abstract: Random telegraph noise (RTN) has been widely used to describe the environmental effects on open quantum systems. In most cases, it is assumed that the environmental noise described by RTN has symmetric properties. However, in… read more here.
Keywords: quantum system; random telegraph; quantum; dephasing dynamics ... See more keywords
Long-time protection of thermal correlations in a hybrid-spin system under random telegraph noise.
Sign Up to like & getrecommendations! Published in 2022 at "Physical review. E"
DOI: 10.1103/physreve.106.034122
Abstract: The engineering features of transmitting mediums and their impact on different characteristics of a quantum system play a significant role in the efficient performance of nonlocal protocols. For this purpose, the dynamics of open quantum… read more here.
Keywords: random telegraph; system; quantum; fisher information ... See more keywords
On the Accuracy in Modeling the Statistical Distribution of Random Telegraph Noise Amplitude
Sign Up to like & getrecommendations! Published in 2021 at "IEEE Access"
DOI: 10.1109/access.2021.3065869
Abstract: The power consumption of digital circuits is proportional to the square of operation voltage and the demand for low power circuits reduces the operation voltage towards the threshold of MOSFETs. A weak voltage signal makes… read more here.
Keywords: random telegraph; accuracy; telegraph noise; distribution ... See more keywords