Enhancing oxidation rate of 4H–SiC by oxygen ion implantation
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DOI: 10.1007/s10853-018-2921-0
Abstract: In this study, the thermal oxidation rate of oxygen ion (O+) implanted 4H–silicon carbide (SiC) was investigated. And the critical breakdown electric field (Ebreakdown) and capacitance–voltage (CV) curve of the grown oxide (SiO2) film were… read more here.
Keywords: oxidation rate; oxidation; rate sic; rate ... See more keywords