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Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2016.12.012
Abstract: Abstract We have investigated the effect of V/III ratio on the surface morphology, impurity concentration and electrical properties of m –plane ( 10 1 ¯ 0 ) Gallium Nitride (GaN) homoepitaxial layers. Four-sided pyramidal hillocks…
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Keywords:
ratio surface;
ratio;
effect iii;
iii ratio ... See more keywords