The interface of SiO2/ZnS films studied by high resolution X-ray photoluminescence
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DOI: 10.1016/j.taml.2018.01.008
Abstract: ABSTRACT Sharp interfaces in optoelectronic devices are key for proper band alignment. Despite its benefits as buffer layer, ZnS deposited via atomic layer deposition (ALD) renders intermixed interfaces to its substrate, which can be detrimental… read more here.
Keywords: high resolution; zns; resolution ray; ray photoluminescence ... See more keywords