X-Rays Diffraction Study of InGaN/GaN Heterostructures Grown by MOCVD Technique at Different Temperatures
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DOI: 10.4028/p-188z42
Abstract: Indium gallium nitride / gallium nitride (InGaN/GaN) heterostructures were grown by using metal organic vapor deposition technique with four different growth temperatures (740 °C, 760 °C, 780 °C, and 800 °C). The structural properties and… read more here.
Keywords: ingan gan; diffraction study; rays diffraction; gan heterostructures ... See more keywords