Interfacial Reaction Boosts Thermal Conductance of Room‐Temperature Integrated Semiconductor Interfaces Stable up to 1100 °C
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DOI: 10.1002/aelm.202400387
Abstract: Overheating has emerged as a primary challenge constraining the reliability and performance of next‐generation high‐performance (ultra)wide bandgap (WBG or UWBG) electronics. Advanced heterogeneous bonding of high‐thermal‐conductivity WBG thin films and substrates not only constitutes a… read more here.
Keywords: reaction boosts; boosts thermal; conductance; interfacial reaction ... See more keywords