Improved read disturb and write error rates in voltage-control spintronics memory (VoCSM) by controlling energy barrier height
Sign Up to like & getrecommendations! Published in 2017 at "Applied Physics Letters"
DOI: 10.1063/1.4986923
Abstract: A hybrid writing scheme that combines the spin Hall effect and voltage-controlled magnetic-anisotropy effect is investigated in Ta/CoFeB/MgO/CoFeB/Ru/CoFe/IrMn junctions. The write current and control voltage are applied to Ta and CoFeB/MgO/CoFeB junctions, respectively. The critical… read more here.
Keywords: cofeb; write error; error; read disturb ... See more keywords
CRRC: Coordinating Retention Errors, Read Disturb Errors and Huffman Coding on TLC NAND Flash Memory
Sign Up to like & getrecommendations! Published in 2023 at "IEEE Transactions on Dependable and Secure Computing"
DOI: 10.1109/tdsc.2022.3177812
Abstract: Nowadays, TLC NAND flash memory has become a mainstream storage medium because of its large capacity and low cost. However, TLC NAND flash memory could have the reliability problem (such as the retention errors and… read more here.
Keywords: tlc nand; nand flash; flash memory; errors read ... See more keywords