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Published in 2018 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2018.2866588
Abstract: Random telegraph noise (RTN) read instability of high-resistance state (HRS) in hafnium–based resistive random access memory (RRAM) is investigated using megabit array statistical analytics. It is found that the RTN read current fluctuation decreases along…
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Keywords:
telegraph noise;
random telegraph;
array;
read instability ... See more keywords