Dynamic Reference Voltage Sensing Scheme for Read Margin Improvement in STT-MRAMs
Sign Up to like & getrecommendations! Published in 2018 at "IEEE Transactions on Circuits and Systems I: Regular Papers"
DOI: 10.1109/tcsi.2017.2749522
Abstract: This paper proposes a novel approach to enhance the STT-MRAMs read margin based on the concept of dynamic reference (DR). Our dynamic reference scheme dynamically adjusts the sense amplifier reference voltage according to the bitline… read more here.
Keywords: voltage; reference voltage; reference; read margin ... See more keywords
A Code Inversion Encoding Technique to Improve Read Margin of A Cross-Point Phase Change Memory
Sign Up to like & getrecommendations! Published in 2019 at "IEEE Transactions on Very Large Scale Integration (VLSI) Systems"
DOI: 10.1109/tvlsi.2019.2909535
Abstract: In this paper, we propose a code inversion encoding technique to improve the read margin of a cross-point phase change memory (PCM). The proposed technique reduces the maximum number of low resistance state cells which… read more here.
Keywords: improve read; margin; margin cross; read margin ... See more keywords