Full-Electrical Writing and Reading of Magnetization States in a Magnetic Junction with Symmetrical Structure and Antiparallel Magnetic Configuration.
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DOI: 10.1021/acsnano.1c03821
Abstract: Full-electrical writing and reading of magnetization states are vital for the development of next-generation spintronic devices with high density and ultralow-power consumption. Here, we proposed a method to realize the full-electrical writing and reading of… read more here.
Keywords: magnetization states; electrical writing; full electrical; magnetization ... See more keywords