Rearrangement of Electroluminescence Spectra in Type-II n-InAs/n-InAsSbP Heterostructures
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DOI: 10.1134/s1063783418030277
Abstract: Single heterostructures of type II n+-InAs/n0-InAs0.59Sb0.16P0.25, based on an intentionally undoped epitaxial layer with an electronic type of conductivity are obtained by metalorganic vapor phase epitaxy (MOVPE). In the heterostructure, a transition layer of modulated… read more here.
Keywords: type inas; electroluminescence spectra; spectra type; rearrangement electroluminescence ... See more keywords