Ultrathin-Barrier AlGaN/GaN Heterostructure: A Recess-Free Technology for Manufacturing High-Performance GaN-on-Si Power Devices
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DOI: 10.1109/ted.2017.2773201
Abstract: (Al)GaN recess-free normally OFF technology is developed for fabrication of high-yield lateral GaN-based power devices. The recess-free process is achieved by an ultrathin-barrier (UTB) AlGaN/GaN heterostructure that features a natural pinched-off 2-D electron gas channel.… read more here.
Keywords: power devices; barrier; recess free; algan gan ... See more keywords