N-Polar GaN-on-Sapphire Deep Recess HEMTs With High W-Band Power Density
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DOI: 10.1109/led.2020.3022401
Abstract: This work presents recent progress in the W-band (94 GHz) power performance of N-polar GaN deep recess HEMTs grown on sapphire substrates. While SiC has been the substrate of choice to achieve the highest level… read more here.
Keywords: polar gan; recess hemts; deep recess; sapphire ... See more keywords