Enhancement of Negative Differential Mobility Effect in Recessed Barrier Layer AlGaN/GaN HEMT for Terahertz Applications
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DOI: 10.1109/ted.2019.2893640
Abstract: A recessed barrier layer (RBL) structure is proposed in themicrometer-sized AlGaN/GaN high-electron mobility transistor (HEMT) for terahertz applications. It is found by using numerical simulation that the properly designed RBL structure can trigger the formation… read more here.
Keywords: algan gan; barrier layer; hemt; hemt terahertz ... See more keywords