Graphene-induced positive shift of the flat band voltage in recessed gate AlGaN/GaN structures
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DOI: 10.1063/5.0038705
Abstract: In this work, a layer of graphene is inserted into Al2O3/recessed gate AlGaN/GaN structures to realize the positive shift of flatband voltage VFB. With a chemically inert surface and a high work function, graphene suppresses… read more here.
Keywords: gan structures; recessed gate; algan gan; gate ... See more keywords
Investigation of Recessed Gate AlGaN/GaN MIS-HEMTs with Double AlGaN Barrier Designs toward an Enhancement-Mode Characteristic
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DOI: 10.3390/mi11020163
Abstract: In this work, recessed gate AlGaN/GaN metal-insulator-semiconductor high-electron-mobility transistors (MIS-HEMTs) with double AlGaN barrier designs are fabricated and investigated. Two different recessed depths are designed, leading to a 5 nm and a 3 nm remaining… read more here.
Keywords: barrier; recessed gate; algan barrier; algan gan ... See more keywords
High-current recessed gate enhancement-mode ultrawide bandgap Al x Ga1−x N channel MOSHFET with drain current 0.48 A mm−1 and threshold voltage +3.6 V
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DOI: 10.35848/1882-0786/abd599
Abstract: We report a recessed-gate enhancement-mode Al2O3-ZrO2/Al0.6Ga0.4N/Al0.4Ga0.6N metal-oxide-semiconductor heterostructure field-effect transistor (MOSHFET) with drain current as high as 0.48 A mm−1 at a gate-source voltage of +12 V. This was enabled by a pseudomorphic HFET structure… read more here.
Keywords: voltage; mode; recessed gate; enhancement mode ... See more keywords