LAUSR

Recombination properties of dislocations in GaN

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1 Published in 2018 at "Journal of Applied Physics"

DOI: 10.1063/1.4995580

Abstract: The recombination activity of threading dislocations in n-GaN with different dislocation densities and different doping levels was studied using electron beam induced current (EBIC). The recombination velocity on a dislocation, also known as the dislocation… read more here.

Keywords: dislocation; dislocations gan; properties dislocations; recombination ... See more keywords