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Published in 2023 at "Nano letters"
DOI: 10.1021/acs.nanolett.3c01248
Abstract: Logic-in-memory architecture holds great promise to meet the high-performance and energy-efficient requirements of data-intensive scenarios. Two-dimensional compacted transistors embedded with logic functions are expected to extend Moore's law toward advanced nodes. Here we demonstrate that…
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Keywords:
transistor;
two dimensional;
logic memory;
reconfigurable logic ... See more keywords
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Published in 2017 at "Nano letters"
DOI: 10.1021/acs.nanolett.6b04417
Abstract: Vertical heterostructures based on graphene have emerged as a unique architecture for novel electronic devices with unusual characteristics. Here we report a new design of vertical ambipolar barristors based on metal-graphene-silicon-graphene sandwich structure, using the…
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Keywords:
graphene;
barristors reconfigurable;
ambipolar barristors;
reconfigurable logic ... See more keywords
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Published in 2023 at "Journal of the American Chemical Society"
DOI: 10.1021/jacs.2c13873
Abstract: XOR gate, an important building block in computational circuits, is often constructed by combining other basic logic gates, and the hybridity inevitably leads to its complexity. A photoelectrochemical device could realize XOR function based on…
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Keywords:
independent reconfigurable;
size independent;
size;
photoelectrochemical device ... See more keywords
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Published in 2017 at "IEEE Electron Device Letters"
DOI: 10.1109/led.2017.2726685
Abstract: Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) circuits are experimentally demonstrated. This is the first experimental demonstration of 65-nm M3D CMOS-NEM RL circuits satisfying the 1.2-V supply voltage ( ${V}_{\mathsf {DD}}$ ) requirement of…
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Keywords:
three dimensional;
dimensional cmos;
cmos nanoelectromechanical;
reconfigurable logic ... See more keywords
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1
Published in 2022 at "Nanomaterials"
DOI: 10.3390/nano12020279
Abstract: We present an array of 225 field-effect transistors (FETs), where each of them has a graphene monolayer channel grown on a 3-layer deposited stack of 22 nm control HfO2/5 nm Ge-HfO2 intermediate layer/8 nm tunnel…
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Keywords:
hfo2;
logic gates;
doped hfo2;
ferroelectric doped ... See more keywords