Atomistic behaviour of (n × 3) -reconstructed areas of InAs-GaAs(001) surface at the growth condition
Sign Up to like & getrecommendations! Published in 2017 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2017.01.009
Abstract: Abstract We have investigated the spatial evolution of ( n × 3 ) surface reconstructed areas during the molecular beam epitaxial growth of InAs–GaAs(001) by using ab initio-based calculation and in situ observation, in order… read more here.
Keywords: inas gaas; reconstructed areas; surface; growth ... See more keywords