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Published in 2019 at "IEEE Transactions on Electron Devices"
DOI: 10.1109/ted.2019.2936584
Abstract: A superjunction MOSFET with an integrated tunneling diode is proposed and investigated by simulations in this article. The tunneling diode comprised the N+ region and the P+ region on the surface of the P-base region…
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Keywords:
recovery charge;
tunneling diode;
reverse recovery;
region ... See more keywords