Analysis and Measurement of the Surge and Gate-Noise Voltages in a 1.7-kV IGBT Module With the Effect of Reverse-Recovery Current
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DOI: 10.1109/tpel.2023.3268673
Abstract: This letter reveals the effect of the reverse-recovery current of a PIN diode on the surge and gate-noise voltages of an insulated-gate bipolar transistor (IGBT) in an inverter. Theoretical analysis reveals that the $di/dt$ of… read more here.
Keywords: surge; analysis; recovery current; gate noise ... See more keywords