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Published in 2020 at "IEEE Transactions on Power Electronics"
DOI: 10.1109/tpel.2019.2930739
Abstract: At present, it is usually necessary to use fast recovery type diodes to cooperate with the fast switching actions of fully controlled devices such as insulated-gate bipolar transistors (IGBTs). However, the specific nature of the…
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Keywords:
switch;
bridge bidirectional;
standard recovery;
diode bridge ... See more keywords