Characterization of InP-based pseudomorphic HEMT with T-gate
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DOI: 10.1007/s00542-019-04491-3
Abstract: This paper proposes two structures of InAlAs/InGaAs-based pseudomorphic high electron mobility transistor (PHEMT): one with rectangular-gate and another with T-gate. Both the proposed PHEMTs consist of an In 0.52 Al 0.48 As supply/barrier layer and… read more here.
Keywords: hemt; ingaas based; gate; rectangular gate ... See more keywords