Excellent Rectifying Properties of the n-3C-SiC/p-Si Heterojunction Subjected to High Temperature Annealing for Electronics, MEMS, and LED Applications
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DOI: 10.1038/s41598-017-17985-9
Abstract: This work examines the stability of epitaxial 3C-SiC/Si heterojunctions subjected to heat treatments between 1000 °C and 1300 °C. Because of the potential for silicon carbide in high temperature and harsh environment applications, and the economic advantages… read more here.
Keywords: excellent rectifying; high temperature; rectifying properties; properties sic ... See more keywords
From symmetric to asymmetric: tuning photophysical and rectifying properties in [2.2]paracyclophanes
Sign Up to like & getrecommendations! Published in 2025 at "Journal of Materials Chemistry C"
DOI: 10.1039/d5tc02049b
Abstract: Five pseudo-para[2.2]paracyclophane derivatives were prepared bearing different electron donating and withdrawing groups. Their optical properties in solution and upon aggregation were studied, and their rectification in the solid state was reported. read more here.
Keywords: rectifying properties; asymmetric tuning; properties paracyclophanes; photophysical rectifying ... See more keywords