Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications
Sign Up to like & getrecommendations! Published in 2021 at "Ceramics International"
DOI: 10.1016/j.ceramint.2021.04.212
Abstract: Abstract In this study, we present a self-rectifying resistive switching property observed in Ti/Zr3N2/p-Si and Ti/Zr2N/p-Si metal-insulator-semiconductor (MIS) capacitors for array applications. Compared to the Zr2N film, the Zr3N2 film has a higher trap density… read more here.
Keywords: film; rectifying resistive; resistive switching; trap ... See more keywords
Rectifying Resistive Memory Devices as Dynamic Complementary Artificial Synapses
Sign Up to like & getrecommendations! Published in 2018 at "Frontiers in Neuroscience"
DOI: 10.3389/fnins.2018.00755
Abstract: Brain inspired computing is a pioneering computational method gaining momentum in recent years. Within this scheme, artificial neural networks are implemented using two main approaches: software algorithms and designated hardware architectures. However, while software implementations… read more here.
Keywords: resistive memory; memory devices; devices dynamic; rectifying resistive ... See more keywords