Reduction of chlorine radical chemical etching of GaN under simultaneous plasma-emitted photon irradiation
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DOI: 10.7567/apex.10.086502
Abstract: Surface chemical reactions on the GaN surface with Cl radicals are thermally enhanced in the high-temperature Cl2 plasma etching of GaN, resulting in the formation of etch pits and thereby, a roughened surface. Simultaneous irradiation… read more here.
Keywords: etching gan; irradiation; plasma; surface ... See more keywords