Reduction of morphological defects in 4H-SiC epitaxial layers
Sign Up to like & getrecommendations! Published in 2019 at "Journal of Crystal Growth"
DOI: 10.1016/j.jcrysgro.2018.10.023
Abstract: Abstract Correlation between morphological defects and device yield in the 4H-SiC epitaxial layers were investigated with overlapped morphological defect mapping and device yield mapping figures. The results show the harmful level of various morphological defects… read more here.
Keywords: triangular defects; sic epitaxial; epitaxial layers; morphological defects ... See more keywords