Reduction of unintentional Si doping in β-Ga2O3 grown via plasma-assisted molecular beam epitaxy
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DOI: 10.1116/6.0000086
Abstract: The authors investigate unintentional Si doping in β-Ga2O3 thin films grown via plasma-assisted molecular beam epitaxy. By identifying the Si dopant cell and the radio frequency oxygen plasma source as the two major sources of… read more here.
Keywords: plasma; unintentional doping; ga2o3; doping ... See more keywords