Reductions of implantation induced defects and leakage current by annealing in NH3/N2 atmosphere for Mg- and N-implanted GaN
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DOI: 10.35848/1882-0786/ac4ddc
Abstract: We demonstrate the advantage of post-implantation annealing (PIA) in NH3/N2 for a p-n diode (PND) fabricated by the implantation of Mg and N ions into an n-type GaN layer by comparison with that annealed in… read more here.
Keywords: induced defects; implantation induced; reductions implantation; implantation ... See more keywords