A Dynamic Reference and Variation-Tolerant Sensing Circuit for Deep Nanometer STT-MRAM
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DOI: 10.1109/tnano.2020.3019511
Abstract: STT-MRAM has received wide attention with its promising properties as the next generation memory. Over the years, with entering into nanometer technology, as process-temperature-voltage (PTV) variations being intensified increasingly, the read reliability of STT-MRAM becomes… read more here.
Keywords: dynamic reference; sensing circuit; stt mram; circuit ... See more keywords