Theory of MBE Growth of Nanowires on Reflecting Substrates
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DOI: 10.3390/nano12020253
Abstract: Selective area growth (SAG) of III-V nanowires (NWs) by molecular beam epitaxy (MBE) and related epitaxy techniques offer several advantages over growth on unpatterned substrates. Here, an analytic model for the total flux of group… read more here.
Keywords: reflecting substrates; growth; growth nanowires; theory mbe ... See more keywords