A Semi‐Floating Memory with 535% Enhancement of Refresh Time by Local Field Modulation
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DOI: 10.1002/adfm.201908089
Abstract: The recently proposed semi‐floating gate memory technology shows the potential to balance conflicts between writing speed and data storage. Although the introduction of the p–n junction greatly improves device writing speed, the inevitable junction leakage… read more here.
Keywords: time; time local; speed; refresh time ... See more keywords