Charge transfer process for carbon-related center in semi-insulating carbon-doped GaN
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DOI: 10.1063/1.5037598
Abstract: Electron paramagnetic resonance (EPR) spectroscopy was used to study the point defects in 2 × 1017–1019 cm−3 C-doped GaN substrates grown by hydride vapor phase epitaxy. The intensity of an isotropic signal with g = 1.987 ± 0.001 increased monotonically… read more here.
Keywords: carbon; carbon related; doped gan; charge transfer ... See more keywords