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Published in 2018 at "Journal of Applied Physics"
DOI: 10.1063/1.5001203
Abstract: We report a systematic study of process-related electrical defects in symmetric lateral NPN transistors on silicon-on-insulator (SOI) fabricated using ion implantation for all the doped regions. A primary objective of this study is to see…
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Keywords:
electrical defects;
study process;
ion implantation;
related electrical ... See more keywords