Defect-related photoluminescence and photoluminescence excitation as a method to study the excitonic bandgap of AlN epitaxial layers: Experimental and ab initio analysis
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DOI: 10.1063/5.0027743
Abstract: We report defect-related photoluminescence (PL) and its vacuum ultraviolet photoluminescence excitation (PLE) spectra of aluminum nitride layers with various layer thicknesses and dislocation densities grown on two different substrates: sapphire and silicon. The defect-related transitions… read more here.
Keywords: photoluminescence; photoluminescence excitation; defect related; related photoluminescence ... See more keywords